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| DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES * High speed switching * Interchangeability of drain and source connections * High impedance. APPLICATIONS * Analog switches * Choppers, multiplexers and commutators * Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect transistor in a SOT23 package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PMBFJ210; PMBFJ211; PMBFJ212 PINNING - SOT23 PIN 1 2 3 SYMBOL s d g drain gate DESCRIPTION source handbook, halfpage 3 d s g 1 Top view 2 MAM385 Marking codes: PMBFJ210: M68. PMBFJ211: M69. PMBFJ212: M70. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage PMBFJ210 PMBFJ211 PMBFJ212 IDSS drain current PMBFJ210 PMBFJ211 PMBFJ212 Ptot yfs total power dissipation common-source transfer admittance PMBFJ210 PMBFJ211 PMBFJ212 Tamb 25 C VGS = 0; VDS = 15 V 4 6 7 12 12 12 mS mS mS VGS = 0; VDS = 15 V 2 7 15 - 15 20 40 250 mA mA mA mW ID = 1 nA; VDS = 15 V -1 -2.5 -4 -3 -4.5 -6 V V V CONDITIONS - MIN. MAX. 25 UNIT V 1997 Dec 01 2 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VDGO IG Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient; note 1 VALUE 500 UNIT K/W PARAMETER drain-source voltage gate-source voltage drain-gate voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb 25 C; note 1; see Fig.13 open drain open source CONDITIONS - - - - - -65 - MIN. MAX. 25 -25 -25 10 250 150 150 V V V mA mW C C UNIT 1997 Dec 01 3 Philips Semiconductors Product specification N-channel field-effect transistors STATIC CHARACTERISTICS Tj = 25 C. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source breakdown voltage gate-source cut-off voltage PMBFJ210 PMBFJ211 PMBFJ212 VGSS IDSS gate-source forward voltage drain current PMBFJ10 PMBFJ11 PMBFJ12 IGSS yfs reverse gate leakage current common-source transfer admittance PMBFJ210 PMBFJ211 PMBFJ212 yos common source output admittance PMBFJ210 PMBFJ211 PMBFJ212 DYNAMIC CHARACTERISTICS Tamb = 25 C. SYMBOL Cis Cos Crs gis gfs grs gos Vn PARAMETER input capacitance output capacitance feedback capacitance common source input conductance common source transfer conductance common source feedback conductance common source output conductance equivalent input noise voltage PMBFJ210; PMBFJ211; PMBFJ212 CONDITIONS IG = -1 A; VDS = 0 ID = 1 nA; VDS = 15 V - MIN. MAX. -25 -3 -4.5 -6 1 15 20 40 -100 12 12 12 150 200 200 V V V V V UNIT -1 -2.5 -4 IG = 0; VDS = 0 VGS = 0; VDS = 15 V 2 7 15 VGS = -15 V; VDS = 0 VGS = 0; VDS = 15 V 4 6 7 VGS = 0; VDS = 15 V - - - - - mA mA mA pA mS mS mS S S S CONDITIONS VDS = 15 V; VGS = -10 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 1 MHz VDS = 15 V; VGS = -10 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 1 MHz VDS = 15 V; VGS = -10 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 1 MHz VDS = 15 V; VGS = 0; f = 100 MHz VDS = 15 V; VGS = 0; f = 450 MHz VDS = 15 V; VGS = 0; f = 100 MHz VDS = 15 V; VGS = 0; f = 450 MHz VDS = 15 V; VGS = 0; f = 100 MHz VDS = 15 V; VGS = 0; f = 450 MHz VDS = 15 V; VGS = 0; f = 100 MHz VDS = 15 V; VGS = 0; f = 450 MHz VDS = 15 V; VGS = 0; f = 1 kHz 2 4 TYP. UNIT pF pF pF pF pF pF S mS mS mS S S S S nV/Hz 0.8 2 0.8 0.9 70 1.1 7.5 7.5 -8 -90 95 200 5 1997 Dec 01 4 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 handbook, halfpage 40 MGM277 handbook, halfpage 12 MGM278 IDSS (mA) 30 yfs (mS) 8 20 4 10 0 0 -2 -4 V -6 GSoff (V) 0 0 -2 -4 V -6 GSoff (V) VDS = 15 V; Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.3 Fig.2 Drain current as a function of gate-source cut-off voltage; typical values. Common-source transfer admittance as a function of gate-source cut-off voltage; typical values. handbook, halfpage 80 MGM279 handbook, halfpage 8 MGM280 gos (S) 60 ID (mA) 6 VGS = 0 V -200 mV 40 4 -400 mV -600 mV 20 2 -800 mV -1.4 V -1 V -1.2 V 8 10 VDS (V) 0 0 -2 -4 V -6 GSoff (V) 0 0 2 4 6 VDS = 15 V; Tamb = 25 C. Fig.4 Common-source output conductance as a function of gate-source cut-off voltage; typical values. PMBFJ210. Tj = 25 C. Fig.5 Output characteristics; typical values. 1997 Dec 01 5 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 handbook, halfpage 8 MGM281 handbook, halfpage 20 MGM282 ID (mA) 6 ID (mA) 16 VGS = 0 V -200 mV 12 4 8 2 4 -400 mV -600 mV -800 mV -1 V -1.2 V -1.4 V 0 -2.5 -2 -1.5 -1 -0.5 0 VGS (V) 0 0 2 4 6 8 10 VDS (V) PMBFJ210. VDS = 10 V; Tj = 25 C. PMBFJ211. Tj = 25 C. Fig.6 Input characteristics; typical values. Fig.7 Output characteristics; typical values. handbook, halfpage 20 MGM283 ID (mA) handbook, halfpage 24 MGM284 16 ID (mA) 16 VGS = 0 V -200 mV -400 mV -600 mV -800 mV -1 V -1.2 V -1.4 V 12 8 8 4 0 -6 -4 -2 0 VGS (V) 0 0 2 4 6 8 10 VDS (V) PMBFJ211. VDS = 10 V; Tj = 25 C. PMBFJ212. Tj = 25 C. Fig.8 Input characteristics; typical values. Fig.9 Output characteristics; typical values. 1997 Dec 01 6 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 handbook, halfpage 24 MGM285 handbook, halfpage 2 MGM286 ID (mA) 16 Crs (pF) 1.5 1 8 0.5 0 -6 -4 -2 VGS (V) 0 0 -10 -8 -6 -4 -2 0 VGS (V) PMBFJ212. VDS = 10 V; Tj = 25 C. VDS = 15 V; f = 1 Mhz; Tamb = 25 C. Fig.10 Input characteristics; typical values. Fig.11 Feedback capacitance as a function of gate-source voltage; typical values. MGM287 handbook, halfpage 5 Cis (pF) handbook, halfpage 300 MGM295 4 Ptot (mW) 200 3 2 100 1 0 -10 -8 -6 -4 -2 0 VGS (V) 0 0 50 100 T 150 amb (C) VDS = 15 V; f = 1 Mhz; Tamb = 25 C. Fig.12 Input capacitance as a function of gate-source voltage; typical values. Fig.13 Power derating curve. 1997 Dec 01 7 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 103 handbook, halfpage ID (A) MGM289 -105 handbook, halfpage IG (pA) MGM288 ID = 10 mA 102 -104 10 -103 1 mA 1 -102 0.1 mA 10-1 -10 10-2 -1 IGSS 10-3 -10-1 0 4 8 12 16 20 VDG (V) 10-4 10-5 -4 -3 -2 -1 V 0 GS (V) VDS = 15 V; Tj = 25 C. Tj = 25 C. Fig.14 Drain current as a function of gate-source voltage; typical values. Fig.15 Gate current as a function of drain-gate voltage; typical values. 1997 Dec 01 8 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 102 handbook, halfpage yis (mS) 10 bis MGM291 102 handbook, halfpage MGM292 yfs (mS) 1 gis 10-1 10 gfs -bfs 10-2 10 102 f (MHz) 103 1 10 102 f (MHz) 103 VDS = 15 V; VGS = 0; Tamb = 25 C. VDS = 15 V; VGS = 0; Tamb = 25 C. Fig.16 Common source input admittance as a function of frequency; typical values. Fig.17 Common source transfer admittance as a function of frequency; typical values. handbook, halfpage 10 MGM293 handbook, halfpage 10 MGM294 yrs (mS) 1 -brs yos (mS) bos 1 10-1 -grs 10-2 10-1 gos 10-3 10 102 f (MHz) 103 10-2 10 102 f (MHz) 103 VDS = 15 V; VGS = 0; Tamb = 25 C. VDS = 15 V; VGS = 0; Tamb = 25 C. Fig.18 Common source reverse admittance as a function of frequency; typical values. Fig.19 Common source output admittance as a function of frequency; typical values. 1997 Dec 01 9 Philips Semiconductors Product specification N-channel field-effect transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads PMBFJ210; PMBFJ211; PMBFJ212 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1997 Dec 01 10 Philips Semiconductors Product specification N-channel field-effect transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PMBFJ210; PMBFJ211; PMBFJ212 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Dec 01 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA56 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117067/00/01/pp12 Date of release: 1997 Dec 01 Document order number: 9397 750 02788 |
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